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Pulsar
Extreme Pulse Control & Tunability
FYLA Pulsar femtosecond excitation laser used in the current table‑top TPA‑TCT systems operating at CERN.
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Pulsar Femtosecond Laser for TPA‑TCT and
3D Semiconductor Detector Characerization
True 3D Silicon Detector Characterization.
Pulsar is a compact femtosecond fiber laser optimized for Two‑Photon Absorption Transient Current Technique (TPA‑TCT) in advanced silicon detector R&D. Operating at 1550 nm, it enables sub‑bandgap excitation in silicon, generating charge carriers exclusively at the laser focal point through two‑photon absorption.
This approach enables true 3D TCT measurements, overcoming the intrinsic limitations of conventional single‑photon laser‑TCT systems. Pulsar provides ultrashort femtosecond pulses with independent control of pulse energy and repetition rate, ensuring stable and reproducible nonlinear absorption conditions for high‑resolution detector characterization.
Its all‑fiber, tabletop‑ready architecture delivers excellent mechanical stability, repeatable pulse delivery, and easy integration into laboratory‑scale TPA‑TCT systems. Developed and validated in collaboration with CERN, Pulsar is a proven laser source for irradiated and non‑irradiated silicon detector characterization.
Central Wavelength
1550 nm
Pulse Duration
≤ 300 fs
Average Power
100 mW @10 MHz
Repetition Rate
10 MHz (Fundamental)
Pulse Energy Tunability
10 pJ to 10 nJ
Power Stability
< 1 % (std. dev.)
Polarization
Linearly Polarised
Output Port
Free Space
Synchronization / Connections
TTL (SMA) -USB - Interlock
Spatial Mode Quality (M2)
< 1.2
Half-angle Beam Divergence
0,032º (at 1560 nm)
Cooling
Thermoelectric cooler + air cooling
Power Requirements
220 V / 110V - 50/60 Hz
Operating Temperature
20 - 30 ºC
Storage Temperature
0 - 60 ºC
Dimensions
500 x 800 x 300 (Main Laser Module)
Electromechanical Shutter Output
Rise-time: 1 ms , Sync. to Pulse train
Control Software
User-friendly
Pulsar Femtosecond Laser for TPA‑TCT in Silicon Detectors
Abstract— The transient current technique (TCT) is widely used in the field of silicon particle detector development. So far, only laser wavelengths with a photon energy larger than or similar to the silicon bandgap (single photon absorption) were used. Recently, measurements using two-photon absorption (TPA) for silicon detector testing have been carried out for the first time. Excess carriers are only created at the focal point of the laser beam and thus resolution in all three spatial directions could be achieved. The resolution perpendicular to the incident laser beam could be increased roughly by a factor of 10. First measurements using this new method were performed at the Singular Laser Facility of Universidad del País Vasco (UPV)/Euskal Herriko Unibertzitatea (EHU). Following the initial success of the method, a compact TPA-TCT setup is under development. A first description of the setup and laser system is presented in this article.
Moritz Wiehe , Marcos Fernández García , Michael Moll , Raúl Montero, F. R. Palomo, Ivan Vila, Héctor Muñoz-Marco, Viorel Otgon, and Pere Pérez-Millán.
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